Pulsed 0.75 kW output single-ended GaN-FET amplifier for L/S band applications

Electronics Letters

Volumn 42, Issue 23, 2006, Pages 1349-1350

  Wakejima, A ^a   Nakayama, T ^a   Ota, K ^a   Okamoto, Y ^a   Ando, Y ^a   Kuroda, N ^a   Tanomura, M ^a   Matsunaga, K ^a   Miyamoto, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC POWER SYSTEMS; ELECTRONICS PACKAGING; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE;

GAN-FET AMPLIFIER; HIGH POWER APPLICATIONS; L/S BAND APPLICATIONS;

AMPLIFIERS (ELECTRONIC);

EID: 33750923695     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062950     Document Type: Article

References (16)

1. Mishra, U.K., Parikh, P., and Wu, Y.-F.: ' AlGaN-GaN HEMTs: an overview of device operation and application ', Proc. IEEE, 2002, 90, (6), p. 1022-1031 10.1109/JPROC.2002.1021567 0018-9219
2. Ando, Y., Okamoto, Y., Miyamoto, H., Hayama, N., Nakayama, T., Kasahara, K., and Kuzuhara, M.: ' 110-W AlGaN-GaN heterojunction FET on thinned sapphire substrate ', IEEE IEDM Tech. Dig., Washington, DC, USA, December, 2001, p. 381-384
3. Eastman, L.F.: ' Experimental power-frequency limits of AlGaN-GaN HEMT's ', IEEE MTT-S Dig., Seattle, WA, USA, July, 2002, p. 2273-2275
4. Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Smith, T.J., Ring, Z., Sumakeris, J., Saxler, A.W., and Milligan, J.W.: ' Application of SiC MESFETs and GaN HEMTs in power amplifier design ', IEEE MTT-S Dig., Seattle, WA, USA, July, 2002, p. 1819-1822
5. Okamoto, Y., Ando, Y., Hataya, K., Miyamoto, H., Nakayama, T., Inoue, M., and Kuzuhara, M.: ' Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate ', IEEE Trans. Microw. Theory Tech., 2004, 52, p. 2536-2540 0018-9480
6. Kikkawa, T., Nagahara, M., Adachi, N., Yokokawa, S., Kato, S., Yokoyama, M., Kanamura, M., Yamaguchi, Y., Hara, N., and Joshi, K.: ' High-power and high efficiency AlGaN/GaN HEMT operated at 50V drain bias voltage ', IEEE RFIC Symp. Dig., Philadelphia, PA, USA, June, 2003, p. 167-170
7. Nagy, W., Singhal, S., Bores, R., Johnson, J.W., Brwon, J.D., Therrien, R., Chaudhari, A., Hanson, A.W., Riddle, J., Booth, S., Rajagopal, P., Piner, E.L., Linthicum, K.J., and Miyamoto, H.: ' 150W GaN-on-Si RF power transistor ', IEEE MTT-S Dig., Long Beach, CA, USA, June, 2005, WE1E-1
8. Wakejima, A., Matsunaga, K., Okamoto, Y., Ando, Y., Nakayama, T., Kasahara, K., and Miyamoto, H.: ' 280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations ', Electron. Lett., 2005, 18, p. 1004-1005 0013-5194
9. Wakejima, A., Matsunaga, K., Okamoto, Y., Ando, Y., Nakayama, T., and Miyamoto, H.: ' 370W output power GaN-FET amplifier for W-CDMA cellular base stations ', Electron. Lett., 2005, 18, p. 1371-1372 0013-5194
10. Wakejima, A., Matsunaga, K., Okamoto, Y., Ota, K., Ando, Y., Nakayama, T., and Miyamoto, H.: ' 370-W output power GaN-FET amplifier with low distortion for W-CDMA base stations ', IEEE MTT-S Dig., San Francisco, CA, USA, June, 2006, p. 1360-1363
11. ″ SiC substrates for wireless infrastructure applications ', IEEE MTT-S Dig., San Francisco, CA, USA, June, 2006, p. 706-709
12. Ui, N., and Sano, S.: ' A 45 drain efficiency, -50dBc ACLR GaN HEMT class-E amplifier with DPD for W-CDMA base station ', IEEE MTT-S Dig., San Francisco, CA, USA, June, 2006, p. 718-721
13. Maekawa, A., Yamamoto, T., Mitani, E., and Sano, S.: ' A 500W push-pull Al-GaN/GaN HEMT amplifier for L-band high power application ', IEEE MTT-S Dig., San Francisco, CA, USA, June, 2006, p. 722-725
14. Dragon, C., Brakensiek, W., Burdeaux, D., Burger, W., Funk, G., Hurst, M., and Rice, D.: ' 200W push-pull and 110W single-ended high performance RF-LDMOS transistors for WCDMA basestation applications ', IEEE-MTT-S Int. Microw. Symp. Dig., 2003, p. 69-72
15. Ishikura, K., Takenaka, I., Takahashi, H., Hasegawa, K., Asano, K., and Kanamori, M.: ' A 28V over 300W GaAs heterojunction FET with dual field-modulating plates for W-CDMA base stations ', IEEE MTT-S Dig., Long Beach, CA, USA, June, 2005, WE3E-1
16. Nagahara, M., Inoue, K., Sano, S., Takahashi, H., and Takase, S.: ' A 28V 250W GaAs power FET with high gain of 15.5dB for W-CDMA base stations ', IEEE MTT-S Int. Microw. Symp. Dig., 2004, p. 1359-1362