200W push-pull & 110W single-ended high performance RF-LDMOS transistors for WCDMA basestation applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 69-72

  Dragon, Chris ^a   Brakensiek, Warren ^a   Burdeaux, David ^a   Burger, Wayne ^a   Funk, Garry ^a   Hurst, Michael ^a   Rice, David ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENCHMARKING; ELECTRIC POTENTIAL; TRANSISTORS;

BASESTATION TRANSCEIVER SYSTEMS;

CODE DIVISION MULTIPLE ACCESS;

EID: 0041663757     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A. Wood, W. Brakensiek, C. Dragon, and W. Burger, "120 Watt, 2GHz, Si LDMOS RF Power Transistor for PCS Base Station Applications," 1998 IEEE MTT-S Int. Microwave Symp. Dig..
2. W. Burger, E. Agyekum, O. Ayoola, G. Bouisse, W. Brakensiek, H. Brech, B. Davidson, C. Dragon, G. Formicone, G. Funk, E. Krvavac, D. Lamey, W. Lau, G. Ma, B. Pryor, and X. Ren, "RF-LDMOS: A Silicon-Based, High Power, High Efficiency Linear Power Amplifier Technology," Proceedings of the 2000 GaAs ManTech Conference.
3. W. Burger, "High-Power RF-LDMOS Transistors for Wireless Applications," 2001 MTTS Workshop On High Power PA Technologies.