A 45% drain efficiency, -50dBc ACLR GaN HEMT class-E amplifier with DPD for W-CDMA base station

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 718-721

  Ui, Norihiko ^a   Sano, Seigo ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

Class E operation; Digital pre distortion(DPD); GaN HEMT; Microwave frequency

Indexed keywords

BASE STATIONS; CODE DIVISION MULTIPLE ACCESS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE FREQUENCIES; VOLTAGE MEASUREMENT;

DIGITAL PREDISTORTION (DPD) OPERATIONS; DRAIN BIAS; LINEAR GAIN;

MICROWAVE AMPLIFIERS;

EID: 33750913037     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249734     Document Type: Conference Paper

References (6)

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