A 28V over 300 W GaAs heterojunction FET with dual field-modulating-plates for W-CDMA base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 823-826

  Ishikura, K ^a   Takenaka, I ^a   Takahashi, H ^a   Hasegawa, K ^b   Asano, K ^b   Kanamori, M ^a  

^a NEC CORPORATION   (Japan)

^b NONE   (Japan)

Author keywords

Field modulating Plate; Heterojunction FETs; High voltage technique; Power FET amplifiers; W CDMA

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERMODULATION; MICROELECTRODES; MICROPROCESSOR CHIPS; NATURAL FREQUENCIES; POWER AMPLIFIERS;

FIELD MODULATING PLATES; HETEROJUNCTION FET; HIGH VOLTAGE TECHNIQUES; POWER FET AMPLIFIERS; W-CDMA;

FIELD EFFECT TRANSISTORS;

EID: 33749265353     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516743     Document Type: Conference Paper

References (6)

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