370-W output power GaN-FET amplifier with low distortion for W-CDMA base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 1360-1363

  Wakejima, Akio ^a   Matsunaga, Kohji ^a   Okamoto, Yasuhiro ^a   Ota, Kazuki ^a   Ando, Yuji ^a   Nakayama, Tatsuo ^a   Miyamoto, Hironobu ^a  

^a R&D Association for Future Electron Devices   (Japan)

Author keywords

Amplifier; Base band impedance; Digital predistortion; GaN FET; Memory effects; W CDMA

Indexed keywords

BASE STATIONS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC BREAKDOWN; ELECTRIC DISTORTION; ELECTRIC IMPEDANCE; GALLIUM NITRIDE;

BASE BAND IMPEDANCE; DIGITAL PREDISTORTION; GAN-FET; MEMORY EFFECTS; W-CDMA;

MICROWAVE AMPLIFIERS;

EID: 33750928464     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249502     Document Type: Conference Paper

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