A 28V 250W GaAs power FET with high gain of 15.5dB for W-CDMA base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2004, Pages 1359-1362

  Nagahara, M ^a   Inoue, K ^a   Sano, S ^a   Takahashi, H ^a   Takase, S ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

28V operation; Base station; GaAs FET; High gain; High power push pull FET; W CDMA

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; EFFICIENCY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC IMPEDANCE; GAIN CONTROL; MODULATION; SEMICONDUCTING GALLIUM ARSENIDE;

BASE STATIONS; DRAIN BIAS; HIGH GAIN; HIGH-POWER PUSH-PULL TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 4544254165     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. K. Inoue, K. Ebihara, H. Haematsu, T. Igarashi, H. Takahashi and J.Fukaya, "A 240W Push-Pull GaAs Power FET for W-CDMA Base Stations", 2000 IEEE MTT-S Digest, pp1719-1722.
3. K. Ebihara, K. Inoue, H. Haematsu, F. Yamaki, H. Takahashi and J. Fukaya, "An Ultra Broad 300W GaAs Power FET for W-CDMA Base Stations", 2001 IEEE MTT-S Digest, pp. 649-652.
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7. K.Inoue et.al., "A High Gain L-band GaAs FET Technology for 28V operation", to be reported at IMS2004.
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