Imaging of high-angle annular dark-field scanning transmission electron microscopy and observations of GaN-based violet laser diodes

Journal of Microscopy

Volumn 223, Issue 3, 2006, Pages 172-178

  Shiojiri, M ^a,b,c   Saijo, H ^b  

^a KANAZAWA MEDICAL UNIVERSITY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^c NONE   (Japan)

Author keywords

GaN based laser diode; High angle annular dark field scanning transmission electron microscopy; Interference and coherence; Multiple quantum wells; Strained layer superlattices

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DIODES; ELECTRONS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; QUANTUM THEORY; QUANTUM WELL LASERS; SCANNING ELECTRON MICROSCOPY;

ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; GAN BASED; GAN BASED LASER DIODES; GAN-BASED LASER DIODES; HIGH-ANGLE ANNULAR DARK FIELDS; HIGH-ANGLE ANNULAR DARK-FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; INTERFERENCE AND COHERENCE; MICROSCOPY IMAGING; STRAINED LAYER SUPERLATTICE; VIOLET LASER DIODES;

SEMICONDUCTOR QUANTUM WELLS;

GALLIUM; NITROGEN DERIVATIVE;

CONFERENCE PAPER; DIODE LASER; ELECTRON; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HIGH ANGLE ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; IMAGING SYSTEM; PHYSICS; PRIORITY JOURNAL; QUANTUM MECHANICS; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

EID: 33750270835     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2006.01613.x     Document Type: Conference Paper

References (33)

1. Born, M. & Wolf, E. (1970) Principles of Optics, 4th edn. Pergamon Press, Oxford.
2. Chen, Y., Takeuchi, T., Amano, H., Akasaki, I., Yamada, N., Kaneko, Y. & Wang, S.Y. (1998) Pit formation in GaInN quantum wells. Appl. Phys. Lett. 72, 710-712.
3. Cowley, J.M. (1969) Image contrast in transmission scanning electron microscopy. Appl. Phys. Lett. 15, 58-60.
4. Dirac, P.A.M. (1947) The Principles of Quantum Mechanics, 3rd edn. Oxford University Press, London.
5. Hall, C.R. & Hirsch, P.B. (1965) Effect of thermal diffuse scattering on propagation of high energy electrons through crystals. Proc. Roy. Soc. London A, 286, 158-177.
6. Howie, A. (1979) Image contrast and localized signal selection techniques. J. Microsc. 117, 11-23.
7. James, R.W. (1948) The Optical Principles of the Diffraction of X-Rays. G. Bell and Sons, London.
8. 3 ceramic condenser by high-angle annular dark field electron microscopy. Philos. Mag. A81, 245-260.
9. Loane, R.F., Xu, P. & Silcox, J. (1991) Thermal vibrations in convergent-beam electron diffraction. Acta Cryst. A27, 267-278.
10. Nakamura, S., Senoh, M., Kagahara, S., et al. (1998) InGaN/GaN/AlGaN- based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate. Appl. Phys. Lett. 72, 211-213.
11. Nakanishi, N., Yamazaki, T., Rečnik, A., Čeh, M., Kawasaki, M., Watanabe, K. & Shiojiri, M. (2002) Retrieval process of high-resolution HAADF-STEM images. J. Electron Microsc. 51, 383-390.
12. Nam, O.H., Bremser, M.D., Zheleva, T. & Davis, R. (1997) Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Appl. Phys. Lett. 71, 2638-2640.
13. Pennycook, S.J. & Nellist, P.D. (1999) Z-contrast scanning transmission electron microscopy. Impact of Electron and Scanning Probe Microscopy on Materials Research (eds D.G. Rickerby, et al.), pp. 161-207. Kluwer Academic Publishers, Dordrecht.
14. Saijo, H., Hsu, J.T., Tu, R.C., Yamada, M., Nakagawa, M., Yang, J.R. & Shiojiri, M. (2004a) Mapping of multiple quantum wells layers and structure of V-defects in InGaN/GaN diodes. Appl. Phys. Lett. 84, 2271-2273.
15. Saijo, H., Nakagawa, M., Yamada, M., Hsu, J.T., Tu, R.C., Yang, J.R. & Shiojiri, M. (2004b) Structure of GaN/AlGaN strained-layer superstructures in GaN-based violet laser diodes. Jpn. J. Appl. Phys. 43, 968-969.
16. Sharma, N., Thomas, P., Tricker, D. & Humphreys, C. (2000) Chemical mapping and formation of V-defects in InGaN multiple quantum wells. Appl. Phys. Lett. 77, 1274-1276.
17. 0.86N/GaN by high-angle annular dark-field scanning transmission electron microscopy. Appl. Phys. Lett. 87, 031914.1-031914.4.
18. Shiojiri, M. & Yamazaki, T. (2003) Atomic resolved HAADF-STEM for composition analysis. JEOL News, 38, 54-59.
19. Šturm, S., Rečnik, A., Kawasaki, M., Yamazaki, T., Watanabe, K., Shiojiri, M. & Čeh, M. (2002) Experimental atomically resolved HAADF-STEM imaging - A parametric study. JEOL News, 37E, 22-25.
20. Tonomura, A. (1998) The Quantum World Unveiled by Electron Waves. World Scientific, Singapore.
21. Tu, R.C., Kuo, W.H., Wang, T.C., Tun, C.J., Hwang, F.C., Chi, J.Y. & Hsu, J.T. (2002) GaN-based violet laser diodes at 415.5 nm grown by production-scale metalorganic vapor phase epitaxy system. Proceedings of the 4th International Symposium Blue Laser and Light Emitting Diode, Cordoba, Spain, pp. 1-2.
22. Usui, A., Sunakawa, H., Sakai, A. & Yamaguchi, A. (1997) Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy. Jpn. J. Appl. Phys. Part 2, 36, L899-36, L902.
23. Watanabe, K., Kotaka, Y., Nakanishi, N., Yamazaki, T., Hashimoto, I. & Shiojiri, M. (2002b) Deconvolution processing of HAADF STEM images. Ultramicroscopy, 92, 191-199.
24. Watanabe, K., Nakanishi, N., Yamazaki, T., Kawasaki, M., Hashimoto, I. & Shiojiri, M. (2003c) Effect of the incident probe on HAADF STEM images. Phys. Stat. Soli. 235, 179-188.
25. Watanabe, K., Yamazaki, T., Hashimoto, I. & Shiojiri, M. (2001a) Atomic-resolution annular dark-field STEM image calculations. Phys. Rev. B, 64, 115432.1-115432.5.
26. Watanabe, K., Yamazaki, T., Kikuchi, Y., Kotaka, Y., Kawasaki, M., Hashimoto, I. & Shiojiri, M. (2001b) Atomic-resolution incoherent high-angle annular dark field STEM images of Si (011). Phys. Rev. B, 63, 085316.1-085316.5.
27. Watanabe, K., Yang, J.R., Huang, S.Y., Inoke, K., Hsu, J.T., Tu, R.C., Yamazaki, T., Nakanishi, N. & Shiojiri, M. (2003a) Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/Ga. Appl. Phys. Lett. 82, 715-717.
28. Watanabe, K., Yang, J.R., Huang, S.Y., Inoke, K., Hsu, J.T., Tu, R.C., Yamazaki, T., Nakanishi, N. & Shiojiri, M. (2003b) Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN. Appl. Phys. Lett. 82, 718-720.
29. Watanabe, K., Yang, J.R., Nakanishi, N., Inoke, K. & Shiojiri, M. (2002a) Direct determination of atomic structure in MQW-InGaN/GaN. Appl. Phys. Lett. 80, 761-762.
30. Yamazaki, T., Kawasaki, M., Watanabe, K., Hashimoto, I. & Shiojiri, M. (2002) Effect of beam tilting on atomic-resolution high-angle annular dark field STEM imaging. Ultramicroscopy, 92, 181-189.
31. 3-doped Zinc Oxide. Ultramicroscopy, 98, 305-316.
32. Yamazaki, T., Watanabe, K., Kikuchi, Y., Kawasaki, M., Hashimoto, I. & Shiojiri, M. (2000b) Two-dimensional distribution of As atoms doped in a Si crystal by atomic-resolution high-angle annular dark field STEM. Phys. Rev. B, 61, 13833-13839.
33. Yamazaki, T., Watanabe, K., Rečnik, A., Čeh, M, Kawasaki, M. & Shiojiri, M. (2000a) Simulation of atomic-scale high-angle annular dark field scanning transmission electron microscopy images. J. Electron Microsc. 49, 753-759.