Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2271-2273

  Saijo, H ^a   Hsu, J T ^b   Tu, R C ^b   Yamada, M ^c   Nakagawa, M ^c   Yang, J R ^d   Shiojiri, M ^a,e  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c HITACHI LTD   (Japan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e KANAZAWA MEDICAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERED ELECTRON IMAGES; CATHODOLUMINESCENCE (CL) MICROSCOPY; COMPOSITIONAL MAPPING; STATIC ATOMIC DISPLACEMENT;

BACKSCATTERING; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2142660790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689740     Document Type: Article

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