High-resolution scanning electron microscopy observation of GaN/AlGaN strained-layer superstructures in GaN-based violet laser diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 968-969

  Saijo, Hiroshi ^a   Nakagawa, Mine ^b   Yamada, Mitsuhiko ^b   Hsu, Jung Tsung ^c   TU, Ru Chin ^c   Yang, Jer Ren ^d   Shiojiri, Makoto ^a,e  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e KANAZAWA MEDICAL UNIVERSITY   (Japan)

Author keywords

AlGaN GaN cladding layer; GaN based laser diode; Scanning electron microscopy; Strained layer superstructure

Indexed keywords

COMPUTER SIMULATION; ELECTRONS; IMAGE PROCESSING; MAPPING; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

ALGAN/GAN CLADDING LAYER; GAN BASED LASER DIODE; SECONDARY ELECTRONS; STRAINED LAYER SUPERSTRUCTURE;

GALLIUM NITRIDE;

EID: 2442478767     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.968     Document Type: Article

References (12)

1. S. Nakamura, M. Senoh, S. Nagahara, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Uemoto, M. Sano and K. Chocho: Appl. Phys. Lett. 72 (1998) 211.
2. A. Usui, H. Sunakawa, A. Sakai and A. Yamaguchi: Jpn. J. Appl. Phys. 36 (1997) L899.
3. K. Kumakura, T. Makimoto and N. Kobayashi: Jpn. J. Appl. Phys. 39 (2000) 2428.
4. P. Kozodoy, M. Hansen, S. P. DenBaars, U. K. Mishra and J. Kauffman: Appl. Phys. Lett. 74 (1999) 3681.
5. Watanabe, J. R. Yang, N. Nakanishi, K. Inoke and M. Shiojiri: Appl. Phys. Lett. 80 (2002) 761.
6. K. Watanabe, N. Nakanishi, T. Yamazaki, J. R. Yang, S. Y. Huang, K. Inoke, J. T. Hsu, R. C. Tu and M. Shoijiri: Appl. Phys. Lett. 82 (2003) 715.
7. K. Watanabe, J. R. Yang, S. Y. Huang, K. Inoke, J. T. Hsu, R. C. Tu, T. Yamazaki, N. Nakanishi and M. Shoijiri: Appl. Phys. Lett. 82 (2003) 718.
8. H. Saijo, R. C. Tu, M. Yamada, M. Nakagawa, J. R. Yang and M. Shiojiri: to be published in Appl. Phys. Lett. 84 (2004).
9. M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, Q. H. Nam, N. Parikh, D. E. Aspnes and R. F. Davis: MRS Internet J. Nitride Semicond. Res. 1 (1996) 8.
10. B. Pecz, Zs Makkai, M. A. di Forte-Poisson, F. Huet and R. E. Dunin-Borkowski: Appl. Phys. Lett. 78 (2001) 1529.
11. R. C. Tu, W. H. Kuo, T. C. Wang, C. J. Tun, F. C. Hwang, J. Y. Chi and J. T. Hsu: Proc. 4th Int. Symp. Blue Laser and Light Emitting Diode, Cordoba, Spain, 2002, p. 1.
12. R. C. Tu, C. J. Tun, J. K. Sheu, W. H. Kuo, T. C. Wang, C. E. Tsai, J. T. Hsu, J. Chi and G. C. Chi: IEEE Electron Device Lett. 24 (2003) 206.