Reaction pathways in remote plasma nitridation of ultrathin SiO 2 films

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 48-55

  Niimi, Hiro ^a   Khandelwal, Amit ^b   Lamb, H Henry ^b   Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; CHEMICAL BONDINGS; KINETIC PATHWAY; LOCAL BONDING; LOW TEMPERATURES; METASTABLES; NEUTRAL SPECIES; NITROGEN INCORPORATION; PENNING IONIZATION; PLASMA ELECTRONS; POSITIVE EMISSIONS; PROCESS PRESSURE; RADIO FREQUENCY PLASMA; REACTION PATHWAYS; REMOTE PLASMA NITRIDATION; REMOTE PLASMAS; RF-POWER; SUB-SURFACES; SUBSTRATE TEMPERATURE; TOP SURFACE; ULTRA-THIN;

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; EMISSION SPECTROSCOPY; NITRIDATION; NITROGEN; PHOTOELECTRONS; PLASMA DIAGNOSTICS; SPATIAL DISTRIBUTION;

NITROGEN PLASMA;

EID: 0036137199     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1419208     Document Type: Article

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