Ti/Al p-GaN Schottky barrier height determined by C-V measurements

Applied Surface Science

Volumn 250, Issue 1-4, 2005, Pages 247-251

  Kim, Jae Wook ^a   Lee, Jhang Woo ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Barrier height; C V characteristics; GaN

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; CAPACITANCE MEASUREMENT; GALLIUM NITRIDE; HALL EFFECT; MODULATION; NATURAL FREQUENCIES; TITANIUM; VOLTAGE MEASUREMENT;

BARRIER HEIGHT; CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; GAN; HALL CONCENTRATION;

SEMICONDUCTOR JUNCTIONS;

EID: 23844500393     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.004     Document Type: Article

References (10)

1. T. Mori, T. Kozawa, T. Ohwaki, Y. Taga, S. Nagai, S. Yamasaki, S. Asami, N. Shibata, and M. Koike Appl. Phys. Lett. 69 1996 3537
2. K.A. Rickert, A.B. Ellis, J.K. Kim, J.-L. Lee, F.J. Himpsel, F. Dwikusuma, and T.F. Kuech J. Appl. Phys. 92 2002 6671
3. E.H. Rhoderick, and R.H. Williams Metal-Semiconductor Contacts 2nd ed. 1988 Clarendon Press Oxford pp. 94-116
4. G.I. Roberts, and C.R. Crowell J. Appl. Phys. 41 1970 1767
5. G.I. Roberts, and C.R. Crowell J. Appl. Phys. 44 1973 536
6. W. Götz, R.S. Kern, C.H. Chen, H. Liu, D.A. Steigerwald, and R.M. Fletcher Mater. Sci. Eng. B 59 1999 211
7. W.G. Oldham, and S.S. Naik Solid State Electron. 15 1972 1085
8. H.C. Casey Jr., A.Y. Cho, D.V. Lang, E.H. Nicollian, and P.W. Foy J. Appl. Phys. 50 1979 3484
9. T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike Appl. Phys. Lett. 65 1994 593
10. L.S. Yu, D. Qiao, L. Jia, S.S. Lau, Y. Qi, and K.M. Lau Appl. Phys. Lett. 79 2001 4536