Carrier transport and optical properties of InGaN SQW with embedded AlGaN δ-layer

IEEE Journal of Quantum Electronics

Volumn 42, Issue 10, 2006, Pages 1023-1030

  Park, Jongwoon ^a   Kaneta, Akio ^a   Funato, Mitsuru ^a   Kawakami, Yoichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

AlGaN; Carrier transport; Delta layer; InGaN; Photoluminescence; Piezoelectric charge; Wave function

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FERMI LEVEL; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; CARRIER TRANSPORT; DELTA FUNCTIONS; LIGHT EMITTING DIODES; NUMERICAL ANALYSIS; OPTICAL PROPERTIES; PIEZOELECTRICITY; QUANTUM CHEMISTRY; QUANTUM WELL LASERS; SULFUR COMPOUNDS; TUNING; WAVE FUNCTIONS;

ALUMINUM GALLIUM NITRIDE; CARRIER DENSITY DISTRIBUTION; CARRIER TRANSPORT; DELTA LAYER; HOLE QUASI-FERMI LEVEL; INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

ACTIVE REGIONS; ALGAN; CARRIER DENSITY; DEGREE OF FREEDOM; DELTA LAYER; DELTA LAYERS; LARGE EFFECTIVE; LASER DIODES; LAYER THICKNESS; LONG WAVELENGTH; LONG-WAVELENGTH EMISSIONS; NUMERICAL RESULTS; PEAK ENERGY; PHOTOLUMINESCENCE MEASUREMENTS; PIEZO-ELECTRIC FIELDS; PIEZOELECTRIC CHARGE; PL LIFETIME; PL MEASUREMENTS; QUASI-FERMI LEVEL; SINGLE QUANTUM WELL; WAVELENGTH TUNING;

EID: 33748900997     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.881722     Document Type: Article

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