Temperature Dependence of Performance of InGaN/GaN MQW LEDs with Different Indium Compositions

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 61-63

  Huh, Chul ^a   Schaff, William J ^a   Eastman, Lester F ^a   Park, Seong Ju ^b  

^a Cornell University   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

In fluctuation; InGaN GaN multiple quantum well (MQW); Light emitting diode (LED); Output power; Temperature coefficient

Indexed keywords

ELECTRON BEAMS; ELECTRON ENERGY LEVELS; EVAPORATION; GALLIUM NITRIDE; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PLASMA ETCHING; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; X RAY DIFFRACTION ANALYSIS;

IN FLUCTUATIONS; INGAN/GAN MULTIPLE-QUANTUM-WELLS (MQW); OUTPUT POWER; TEMPERATURE COEFFICIENTS;

LIGHT EMITTING DIODES;

EID: 1342308183     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822659     Document Type: Article

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