Photoluminescence properties of ion beam synthesized β-FeSi 2

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 160-164

  Maeda, Yoshihito ^a   Terai, Yoshikazu ^b   Itakura, Masaru ^c   Kuwano, Noriyuki ^c  

^a KYOTO UNIVERSITY   (Japan)

^b Osaka Prefecture University   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

FeSi2; Defect; Ion beam synthesis; Photoluminescence

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; MORPHOLOGY; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; STACKING FAULTS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

Β-FESI2; EXCITATION POWER; IMPLANTATION DAMAGES; ION BEAM SYNTHESIS;

IRON COMPOUNDS;

EID: 2942644503     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.057     Document Type: Conference Paper

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