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Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 473-477

Fabrication of p-Si/β-FeSi2 balls/n-si structures by MBE and their electrical and optical properties

(6) Suemasu, T a Fujii, T a Tanaka, M a Takakura, K a Iikura, Y a Hasegawa, F a

a UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Aggregation; Light emitting diode; Reactive deposition epitaxy (RDE); Si MBE; FeSi2

Indexed keywords

EID: 0347877383 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(98)00158-6 Document Type: Article

Times cited : (17)

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