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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 11 B, 2004, Pages

Thermal enhancement of 1.6 μm electroluminescence from a Si-based light-emitting diode with β-FeSi2 active region

(4) Li, Cheng a Ozawa, Yoshinori b Suemasu, Takashi a,b Hasegawa, Fumio a,b

a Ctr for Tsukuha Adv Res Alliance

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

fesi2; Electroluminescence; LED

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRON TRAPS; IRON COMPOUNDS; SILICON; THERMAL EFFECTS;

Β-FESI2; ION BEAM SYNTHESIS (IBS); REACTIVE DEPOSITION EPITAXY (RDE); THERMAL ENHANCEMENT;

LIGHT EMITTING DIODES;

EID: 11144239285 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L1492 Document Type: Article

Times cited : (6)

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