Dominant SILC mechanisms in HFO2/TiN gate nMOS and pMOS transistors

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 642-643

  Krishnan, Siddarth A ^a   Peterson, Jeff J ^a   Young, Chadwin D ^a   Brown, George ^a   Choi, Rino ^a   Harris, Rusty ^b   Sim, Jang Hoan ^a   Zeitzoff, Peter ^a   Kirsch, Paul ^c   Gutt, Jim ^a   Li, Hong Jyh ^b   Matthews, Ken ^a   Lee, Jack C ^d   Lee, Byoung Hun ^c   Bersuker, Gennadi ^a  

^a SEMATECH   (United States)

^b AMD ^*

^c IBM   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

HfO2; High K Dielectrics; Reliability; SILC

Indexed keywords

EID: 28744434610     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. P. Olivia et al, Trans. on Elec. Devices, V. 35, No.12, Dec. 1988
2. F.Crupi et al, IRPS 2004, Apr. 2004, Pg:181-187
3. N. Zhan et al. Elec. Devices and Solid-State Circ. 2003
4. B.H.Lee et al, to be presented at IEDM, 2004.
5. C.D.Young et al, SSDM, Pg:216, 2004.
6. C. Young et al, IRPS, Apr. 2004, Pg: 597-598