Direct determination of interface and bulk traps in stacked HfO2 dielectrics using charge pumping method

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 581-582

  Hou, T H ^a   Wang, M F ^a   Mai, K L ^a   Lin, Y M ^a   Yang, M H ^a   Yao, L G ^a   Jin, Y ^a   Chen, S C ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDES; OPTIMIZATION; SILICA;

CHARACTERIZATION METHODS; CHARGE PUMPING METHOD; DEVICE PERFORMANCE; DIRECT DETERMINATION; HFO2 DIELECTRIC; INTERFACE AND BULK TRAPS; PROCESS CONDITION; TRAP DENSITY;

HIGH-K DIELECTRIC;

EID: 84932139981     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315399     Document Type: Conference Paper

References (3)

1. A. Kerber et al., "Origin of the Threshold Voltage Instability in Si03/Hf03 Dual Layer Gate Dielectrics", IEEE Electron Device Lett., vol 24, p. 87, 2003.
2. W. Chen, A. Balasinski, and T. P. Ma, "Lateral Profiling of Oxide , Charge and Interface Traps Near MOSFET Junctions", IEEE Trans. Electron Devices, vol. 40, p. 187, 1993.
3. A. Kerber et al., "Direct Measurement of the Inversion Charge in , MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics, " Symp. on VLSI Technology, p. 159, Jun. 2003