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Volumn 6283 I, Issue , 2006, Pages

EUV mask process development and integration

Author keywords

EUV lithography; EUV mask; Integration

Indexed keywords

DRY ETCHING; LITHOGRAPHY; OPTIMIZATION; SILICON WAFERS; TANTALUM; ULTRAVIOLET RADIATION;

EID: 33748045814     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.681839     Document Type: Conference Paper
Times cited : (14)

References (18)
  • 1
    • 33748085784 scopus 로고    scopus 로고
    • International technology roadmap for semiconductors 2005 edition
    • International Technology Roadmap for Semiconductors 2005 Edition, Lithography, pp 19-20, http://www.itrs.net/Common/2005ITRS/Home2005.htm
    • Lithography , pp. 19-20
  • 3
    • 0033671568 scopus 로고    scopus 로고
    • EUV mask absorber characterization and selection
    • Photomask and Next-Generation Lithography Mask Technology VII
    • P. Y. Yan, G. Zhang, P. Kofron, J. Powers, M. Tran, T. Liang, A. Stivers, and F. C. Lo, "EUV mask absorber characterization and selection," in Photomask and Next-Generation Lithography Mask Technology VII, Proc. SPIE Vol. 4066, pp. 116-244, 2002.
    • (2002) Proc. SPIE , vol.4066 , pp. 116-244
    • Yan, P.Y.1    Zhang, G.2    Kofron, P.3    Powers, J.4    Tran, M.5    Liang, T.6    Stivers, A.7    Lo, F.C.8
  • 4
    • 84862354939 scopus 로고    scopus 로고
    • EUVL mask SEMI standards (http://www.semi.org/PUBS/SEMIPUBS.NSF/ 94fa0e7958a87ffb882565f6000cf3aa!OpenView&Start=37)
    • EUVL Mask SEMI Standards
  • 5
    • 84862354939 scopus 로고    scopus 로고
    • EUVL mask SEMI standards (http://www.semi.org/PUBS/SEMIPUBS.NSF/ 94fa0e7958a87ffb882565f6000cf3aa!OpenView&Start=38)
    • EUVL Mask SEMI Standards
  • 6
    • 1842579509 scopus 로고    scopus 로고
    • EUVL mask with Ru ML capping
    • 23rd Annual BACUS Symposium on Photomask Technology
    • P. Y. Yan, G. Zhang, S. Chegwidden, E. Spiller, P. Mirkarimi, "EUVL Mask with Ru ML Capping," 23rd Annual BACUS Symposium on Photomask Technology, Proc. SPIE Vol 5256, pp. 1281-1286. 2003.
    • (2003) Proc. SPIE , vol.5256 , pp. 1281-1286
    • Yan, P.Y.1    Zhang, G.2    Chegwidden, S.3    Spiller, E.4    Mirkarimi, P.5
  • 7
    • 11844306667 scopus 로고    scopus 로고
    • Ru capped EUVL ML mask blank performance
    • Photomask and Next-Generation Lithography Mask Technology XI
    • P. Y. Yan, G. Zhang, E. Spiller, P. Mirkarimi, "Ru capped EUVL ML Mask Blank Performance," Photomask and Next-Generation Lithography Mask Technology XI, Proc. SPIE Vol 5446, pp. 824-831, 2004.
    • (2004) Proc. SPIE , vol.5446 , pp. 824-831
    • Yan, P.Y.1    Zhang, G.2    Spiller, E.3    Mirkarimi, P.4
  • 10
    • 11844294976 scopus 로고    scopus 로고
    • Shadowing effect minimization in EUV mask by modeling
    • Photomask and Next-Generation Lithography Mask Technology XI
    • M. Besacier, P. Schiavone, "Shadowing effect minimization in EUV mask by modeling," Photomask and Next-Generation Lithography Mask Technology XI, Proc. SPIE Vol. 5446 pp. 849-859, 2004.
    • (2004) Proc. SPIE , vol.5446 , pp. 849-859
    • Besacier, M.1    Schiavone, P.2
  • 13
  • 16
    • 0036380443 scopus 로고    scopus 로고
    • Verification studies of thermophoretic protection for EUV masks
    • Emerging Lithographic Technologies VI
    • D. J. Rader, D. E. Dedrick, E. W. Beyer, A. H. Leung, L. E. Klebanoff, "Verification studies of thermophoretic protection for EUV masks," Emerging Lithographic Technologies VI, Proc. SPIE Vol. 4688, pp. 182-193, 2002.
    • (2002) Proc. SPIE , vol.4688 , pp. 182-193
    • Rader, D.J.1    Dedrick, D.E.2    Beyer, E.W.3    Leung, A.H.4    Klebanoff, L.E.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.