EUVL mask patterning with blanks from commercial supplier

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 774-780

  Yan, Pei Yang ^a   Zhang, Guojing ^a   Nagpal, Rajesh ^a   Shu, Emily Y ^a   Li, Chaoyang ^a   Qu, Ping ^a   Chen, Frederick ^a  

^a INTEL CORPORATION   (United States)

Author keywords

EUV multi layers; EUVL; EUVL mask; EUVL mask blanks; ML capping

Indexed keywords

EUV MULTILAYERS; EUVL MASK BLANKS; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) MASKS; MULTILAYER (ML) CAPPING;

DEFORMATION; DEPOSITION; ELECTROMAGNETIC WAVE REFLECTION; LITHOGRAPHY; MULTILAYERS; POLISHING; STRESS RELAXATION; TENSILE STRESS; THERMAL EXPANSION; ULTRAVIOLET RADIATION;

MASKS;

EID: 19844363172     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.569329     Document Type: Conference Paper

References (4)

1. EUVL mask SEMI standards http://www.semi.org/PUBS/SEMIPUBS.NSF/ 94fa0e7958a87ffb882565f6000cf3aa!OpenView&Start=38
2. P. Y Yan, G. Zhang, S. Chegwidden, E. Spiller, and P. Mirkarimi, "EUVL masks with Ru ML capping," SPIE Vol. 5256, pp1281, 2003.
3. P. Y. Yan, G. Zhang, E Spiller, and P. Mirkarimi, "Ru Capped EUVL ML Mask Blank Performance," SPIE Vol. 5446, pp824, 2004.
4. Alan R. Stivers, P. Y. Yan, Guojing Zhang, Ted Liang, Emily Y. Shu, Edita Tejnil, Gökhan Perçin, Barry Lieberman, Rajesh Nagpal, Kangmin Hsia, Michael Penn, and Fu-Chang Lo, "EUV Mask Pilot Line at Intel Corporation," Submitted to Photomask Technology Symposium, Sept. 2004.