Ru capped EUVL ML mask blank performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5446, Issue PART 2, 2004, Pages 824-831

  Yan, Pei Yang ^a   Zhang, Guojing ^a   Spiller, Eberhard ^b   Mirkarimi, Paul ^c  

^a INTEL CORPORATION   (United States)

^b Spiller X ray Optics   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

EUVL mask processing; EUVL ML mask blank; Ru capped ML

Indexed keywords

CAPPING LAYERS; EUVL MASK PROCESSING; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) MULTI-LAYER (ML) MASK BLANK; RU CAPPED ML;

CHEMICAL RESISTANCE; LIGHT ABSORPTION; OPTICAL MULTILAYERS; OXIDATION; PHOTOLITHOGRAPHY; SILICON; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

MASKS;

EID: 11844306667     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.557816     Document Type: Conference Paper

References (4)

1. S. Bajt, H. Chapman, N. Nguyen, J. Alameda, J. Robinson, M. Malinowski, E. Gullikson, A. Aquila, C. Tarrio, S. Grantham, "Design and performance of capping layers for EUV multiplayer mirrors," SPIE Vol. 5037, p236-248, 2003.
2. P. Y Van, G. Zhang, S. Chegwidden, E. Spiller, and P. Mirkarimi, "EUVL masks with Ru ML capping," Photomask Technology and Management, SPIE Vol. 5256, p1281, 2003.
3. EUVL mask SEMI standards (http://www.semi.org/PUBS/SEMIPUBS.NSF/ 94fa0e7958a87ffb882565f6000cf3aa!OpenView&Start=38)
4. T. Liang and Alan Stivers, "Demonstration of damage free mask repair using electron beam-induced processes," To be published on SPIE Vol 5446, 2004.