EUV mask pattern defect printability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6283 I, Issue , 2006, Pages

  Liang, Ted ^a   Zhang, Guojing ^b,c   Naulleau, Patrick ^a   Myers, Alan ^a   Park, Seh Jin ^a   Stivers, Alan ^a   Vandentop, Gilroy ^a  

^a INTEL CORPORATION   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

EUV lithography; Mask defect printability; Mask inspection and repair

Indexed keywords

EUV LITHOGRAPHY; MASK DEFECT PRINTABILITY; MASK INSPECTION AND REPAIR;

COHERENT LIGHT; COMPUTER SIMULATION; DATA ACQUISITION; DEFECTS; LITHOGRAPHY; SILICON WAFERS;

MASKS;

EID: 33748053338     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.681844     Document Type: Conference Paper

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