Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 215-217

  Auer, U ^b   Prost, W ^b   Agethen, M ^b   Tegude, F J ^a,b   Duschl, R ^c   Eberl, K ^c  

^a IEEE

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

High speed electronics; Negative resistance circuits; Silicon; Tunnel diodes

Indexed keywords

ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENTS (MOBILE);

TUNNEL DIODES;

EID: 0035337108     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919233     Document Type: Article

References (10)

1. A new resonant tunneling logic gate employing monostable-bistable transition
2. 80 GBit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode
3. Threshold logic circuit design of parallel adders using resonant tunnelling devices
4. Electron resonant tunnelling in Si/SiGe double barrier diodes
5. Si/SiGe electron resonant tunneling diodes
6. High room temperature peak-to-valley current ratio in Si based Esaki diodes
7. Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
8. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
9. Power and stability limitations of resonant tunnelling diodes