Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Uedono, A ^a   Ikeuchi, K ^a   Otsuka, T ^a   Yamabe, K ^a   Eguchi, K ^b   Takayanagi, M ^b   Ishibashi, S ^c   Ohdaira, T ^c   Muramatsu, M ^c   Suzuki, R ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; ELECTRIC PROPERTIES; ELECTRODES; MOSFET DEVICES; OXYGEN; PLASTIC FILMS; POLYCRYSTALLINE MATERIALS; POSITRONS; RADIATION; SILICON;

ANNIHILATION RADIATION; GATE ELECTRODES; MONOENERGETIC POSITRON BEAMS; OXYGEN-RELATED DEFECTS; VACANCY-IMPURITY COMPLEXES;

HAFNIUM COMPOUNDS;

EID: 33747449894     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219700     Document Type: Article

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