Identification of vacancy-oxygen complexes in Si by coincidence Doppler broadening of positron annihilation radiation and first-principles calculations

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 67-69

  Tang, Z ^a   Nonaka, T ^b   Nagai, Y ^b   Hasegawa, M ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Coincidence Doppler broadening; Full potential linearized augmented plane wave calculation; Positron annihilation; Si; Vacancy oxygen complexes

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DEFECTS; DOPPLER EFFECT; ELECTRON IRRADIATION; ELECTRONS; NUMERICAL METHODS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

COINCIDENCE DOPPLER BROADENING; FULL POTENTIAL AUGMENTED PLANE WAVE; POST IRRADIATION ANNEALING; VACANCY-OXYGEN COMPLEXES;

SILICON;

EID: 0034997058     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.67     Document Type: Conference Paper

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