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Applied Surface Science

Volumn 194, Issue 1-4, 2002, Pages 76-83

Positron lifetime and coincidence Doppler broadening study of vacancy-oxygen complexes in Si: Experiments and first-principles calculations

(5) Hasegawa, M a Tang, Z a Nagai, Y b Nonaka, T b Nakamura, K a

a TOHOKU UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

First principles calculation; Positron annihilation; Si; Vacancy oxygen complexes

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DOPPLER EFFECT; ELECTRON IRRADIATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SILICON;

COINCIDENCE DOPPLER BROADENING (CDB); POSITRON ANNIHILATIONS;

POINT DEFECTS;

EID: 0037150949 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(02)00092-2 Document Type: Conference Paper

Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.