Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6488-6492

  Uedono, Akira ^a   Chen, Zhi Quan ^a   Ogura, Atsushi ^b   Suzuki, Ryoichi ^c   Ohdaira, Toshiyuki ^c   Mikado, Tomohisa ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NEC CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION RADIATIONS; DOPPLER BROADENING SPECTRA; HYDROGEN ATMOSPHERE; HYDROGEN ATOMS; HYDROGEN INTERACTION; MEAN SIZE; MONOENERGETIC POSITRON BEAM; OPEN SPACE; OXYGEN PRECIPITATES; SI-ON-INSULATOR; SILICON ON INSULATOR WAFERS; SOI WAFERS; VACANCY-TYPE DEFECTS;

ELECTRONS; HYDROGEN; OXYGEN; OXYGEN VACANCIES; PARTICLE BEAMS; POSITRONS; SILICON WAFERS;

DEFECTS;

EID: 0037094697     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1470253     Document Type: Article

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