Vacancy-type defects in strained-Si layers deposited on SiGeSi structures probed by using monoenergetic positron beams

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Uedono, Akira ^a,d   Hattori, Nobuyoshi ^b   Naruoka, Hideki ^b   Ishibashi, Shoji ^c   Suzuki, Ryoichi ^c   Ohdaira, Toshiyuki ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION RADIATION; DOPPLER BROADENING SPECTRA; MONOENERGETIC POSITRON BEAMS; VACANCY CLUSTERS;

ANNEALING; COMPLEXATION; CRYSTAL DEFECTS; DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; PROBES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

MOSFET DEVICES;

EID: 19944434027     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1830086     Document Type: Article

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