Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 77-81

  Rivera, A ^a,b   De Nijs, J M M ^a   Balk, P ^a   Van Veen, A ^b   Schut, H ^b   Alkemade, P F A ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEUTERIUM; ELECTRON BEAMS; ELECTRON SPECTROSCOPY; ION IMPLANTATION; OXYGEN; POINT DEFECTS; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

ANNIHILATION; ELECTRON BEAM SPECTROSCOPY; POSITRON BEAM SPECTROSCOPY; SILICON IMPLANTED WITH OXYGEN;

SILICON WAFERS;

EID: 0033897575     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00438-9     Document Type: Article

References (10)

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