Influences of carbon content and power density on the uniformity of PECVD grown a-Si1-x:Cx:H thin films

Vacuum

Volumn 81, Issue 1, 2006, Pages 120-125

  Akaoglu, B ^a   Gulses, A ^a   Atilgan, I ^a   Katircioglu, B ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Amorphous alloys; Deposition uniformity; Optical properties.; Plasma CVD

Indexed keywords

AMORPHOUS ALLOYS; AMORPHOUS MATERIALS; ELLIPSOMETRY; ENERGY GAP; FILM GROWTH; OPACITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON CARBIDE;

DEPOSITION RATE; DEPOSITION UNIFORMITY; OPTICAL ENERGY GAP; POWER DENSITY;

THIN FILMS;

EID: 33747330305     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.03.005     Document Type: Article

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