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Volumn 35, Issue 12, 1996, Pages 4464-4470

Kinetics of GaAs Dissolution in H2O2-NH4OH-H2O Solutions

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMMONIUM COMPOUNDS; CHEMICAL REACTORS; COMPOSITION EFFECTS; DISSOLUTION; ETCHING; HYDROGEN PEROXIDE; OXIDATION; REACTION KINETICS; SOLUBILITY; WATER; X RAY SPECTROSCOPY;

EID: 0030383387     PISSN: 08885885     EISSN: None     Source Type: Journal    
DOI: 10.1021/ie960278t     Document Type: Article
Times cited : (36)

References (24)
  • 1
    • 0020909661 scopus 로고
    • Chemical Etching Characteristics of (001)GaAs
    • Adachi, S.; Oe, K. Chemical Etching Characteristics of (001)GaAs. J. Electrochem. Soc. 1983, 130, 2427.
    • (1983) J. Electrochem. Soc. , vol.130 , pp. 2427
    • Adachi, S.1    Oe, K.2
  • 2
    • 0029346855 scopus 로고
    • A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors
    • Bacher, K.; Harris, J. S. A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors. J. Electrochem. Soc. 1995, 142, 2386.
    • (1995) J. Electrochem. Soc. , vol.142 , pp. 2386
    • Bacher, K.1    Harris, J.S.2
  • 5
    • 0017518184 scopus 로고
    • Chemical Preparation of GaAs Surfaces and their Characterization by Auger Electron and X-ray Photoemission Spectroscopies
    • Chang, C. C.; Citrin, P. H.; Schwartz, B. Chemical Preparation of GaAs Surfaces and their Characterization by Auger Electron and X-ray Photoemission Spectroscopies. J. Vac. Sci. Technol. 1977, 14, 943.
    • (1977) J. Vac. Sci. Technol. , vol.14 , pp. 943
    • Chang, C.C.1    Citrin, P.H.2    Schwartz, B.3
  • 6
    • 0010058647 scopus 로고
    • Evaluation of a New Polish for Gallium Arsenide Using a Peroxide - Alkaline Solution
    • Dyment, J. C.; Rozgonyi, G. A. Evaluation of a New Polish for Gallium Arsenide Using a Peroxide - Alkaline Solution. J. Electrochem. Soc. 1971, 118, 1346.
    • (1971) J. Electrochem. Soc. , vol.118 , pp. 1346
    • Dyment, J.C.1    Rozgonyi, G.A.2
  • 9
    • 0019056748 scopus 로고
    • Anodic Oxide/GaAs and InP Interface Formation
    • Geib, K. M.; Wilmsen, C. W. Anodic Oxide/GaAs and InP Interface Formation. J. Vac. Sci. Technol. 1980, 17, 952.
    • (1980) J. Vac. Sci. Technol. , vol.17 , pp. 952
    • Geib, K.M.1    Wilmsen, C.W.2
  • 10
    • 0025482331 scopus 로고
    • Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs
    • Hill, D. G.; Lear, K. L.; Harris, J. S., Jr. Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs. J. Electrochem. Soc. 1990, 137, 2912.
    • (1990) J. Electrochem. Soc. , vol.137 , pp. 2912
    • Hill, D.G.1    Lear, K.L.2    Harris Jr., J.S.3
  • 14
    • 0017981972 scopus 로고
    • Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide
    • Kern, W. Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide. RCA Rev. 1978, 39, 278.
    • (1978) RCA Rev. , vol.39 , pp. 278
    • Kern, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.