Oxidation of GaAs using helicon-wave excited nitrogen-oxygen-argon plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 4 B, 1998, Pages

  Wada, Satoshi ^a   Kasahara, Fumio ^a   Hara, Akio ^a   Ikoma, Hideaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; ARSENIC COMPOUNDS; COMPOSITION; HELICONS; NICKEL; OXYGEN; PLASMAS; SEMICONDUCTOR GROWTH; SUBSTRATES;

CAPACITANCE VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032046807     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l427     Document Type: Article

References (9)