Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2207-2213

  Yin, Haizhou ^a,b,c   Hobart, Karl D ^a,d   Peterson, Rebecca L ^a,b   Kub, F J ^d   Sturm, James C ^a,b  

^a IEEE   (United States)

^b Princeton University   (United States)

^c IBM   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Compliant substrate; SiGe; Silicon on insulator (SOI); Strained Si

Indexed keywords

COMPLIANT SUBSTRATE; DIFFUSION BARRIER; STRAINED SILICON;

BORON; DIFFUSION; FIELD EFFECT TRANSISTORS; PHOSPHORUS; SILICON WAFERS; THIN FILMS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33746799544     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856185     Document Type: Article

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