Atomic-layer-deposited silicon-nitride/SiO2 stack - A highly potential gate dielectrics for advanced CMOS technology

Microelectronics Reliability

Volumn 42, Issue 12, 2002, Pages 1823-1835

  Nakajima, Anri ^a   Khosru, Quazi D M ^b   Yoshimoto, Takashi ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DEPOSITION; DIELECTRIC FILMS; DIFFUSION; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICA; SILICON NITRIDE; THERMODYNAMIC STABILITY;

GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0036890566     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00095-1     Document Type: Article

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