Comparison of ultrathin SiO 2/Si(100) and SiO 2/Si(111) interfaces from soft x-ray photoelectron spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2132-2137

  Ulrich, M D ^a,b   Rowe, J E ^c   Keister, J W ^d   Niimi, H ^b,e   Fleming, L ^b   Lucovsky, G ^b  

^a U S ARMY RESEARCH OFFICE   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c University of North Carolina at Chapel Hill   (United States)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND CONSTRAINT THEORY; SOFT X RAY PHOTOELECTRON SPECTROSCOPY (SXPS); SUBOXIDE CONSISTENTS; THERMAL ANNEALING;

ANNEALING; CONSTRAINT THEORY; CRYSTALLINE MATERIALS; DATA REDUCTION; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); OXIDATION; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON COMPOUNDS;

EID: 33746653044     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2218865     Document Type: Article

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