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Volumn 4, Issue 1-2, 2005, Pages 63-66

Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling

Author keywords

Ballistic transport; Poisson; Quantum modeling; Three dimensional

Indexed keywords


EID: 25144479952     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-005-7108-7     Document Type: Article
Times cited : (13)

References (15)
  • 1
    • 25144435326 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors Semiconductor Industry Association, S. Josè, USA
    • International Technology Roadmap for Semiconductors 2003, Semiconductor Industry Association, S. Josè, USA (http://public.itrs.net).
    • (2003)
  • 14
    • 33846410438 scopus 로고
    • 10.1103/PhysRev.81.385
    • J.C. Slater, Phys. Rev., 81, 385 (1951). 10.1103/PhysRev.81.385
    • (1951) Phys. Rev. , vol.81 , pp. 385
    • Slater, J.C.1
  • 15
    • 25144449028 scopus 로고    scopus 로고
    • www.mtl.mit.edu/Well
    • www.mtl.mit.edu/Well


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.