Performance Improvement of MOSFET with HfO 2-Al 2O 3 Laminate Gate Dielectric and CVD-TaN Metal Gate Deposited by TAIMATA

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 327-330

  Park, Seong Geon ^a   Lee, You Kyoung ^a   Kang, Sang Bom ^a   Jung, Hyung Suk ^a   Doh, Seok Joo ^a   Lee, Jong Ho ^a   Choi, Jae Ho ^b   Kim, Gyeong Hoon ^b   Choi, Gil Heyun ^a   Chung, U In ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

^b Evertek Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; WORK FUNCTIONS;

ALUMINA; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIC FILMS; PROBLEM SOLVING; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 17644437606     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. 2 laminate gate dielectric" IEDM Tech. Dig. P.853(2002).
2. D. G. Park et al., "Novel damage-free direct metal gate process using atomic layer deposition" VLSI Tech. Dig. P.65(2001).
3. Q. Lu et al., "Metal gate work function adjustment for future CMOS technology" VLSI Tech. Dig. P.45(2001).
4. Y. Suh et al., "Electrical characteristics of TaSixNy gate electrodes for dual gate Si-CMOS devices" VLSI Tech. Dig. P.47(2001).
5. Y. H. Kim et al., "High quality CVD TaN gate electrode for sub-100nm MOS devices" IEDM Tech. Dig. P.667(2001).
6. B. H. Lee et al., "Characteristics of TaN gate MOSFET with ultra thin hafnium oxide" IEDM Tech. Dig.