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Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 4092-4094

Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

(3) Katz, O a Bahir, G a Salzman, J a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; GALLIUM NITRIDE; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOCHROMATORS; PERMITTIVITY; PHOTOCURRENTS; PHOTONS; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES;

BARRIER TUNNELING; CARRIER CAPTURE COEFFICIENT; PHOTON FLUX; SEMICONDUCTOR METAL INTERFACE;

ULTRAVIOLET DETECTORS;

EID: 2942583455 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1753056 Document Type: Article

Times cited : (120)

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