Effects of the buffer layers on the performance of (Al,Ga)N ultraviolet photodetectors

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4367-4370

  Mosca, Mauro ^a   Reverchon, Jean Luc ^a   Omnés, Franck ^b   Duboz, Jean Yves ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFRACTOMETERS; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; LATTICE CONSTANTS; LIGHT EMITTING DIODES; MONOCHROMATORS; NUCLEATION; PHOTOCONDUCTING MATERIALS; PHOTOLITHOGRAPHY; SEMICONDUCTOR MATERIALS; SOLAR RADIATION; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; METAL-SEMICONDUCTOR-METAL (MSM); METALOGRAPHIC CHEMICAL VAPOR DEPOSITION (MOCVD); TRANSIMPEDANCE AMPLIFIERS;

ULTRAVIOLET DETECTORS;

EID: 2342481266     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650535     Document Type: Article

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