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Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 347-349

Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry

(5) Katz, O a Garber, V a Meyler, B a Bahir, G a Salzman, J a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BURIED LAYER; DETECTIVITY; EFFECT OF DISLOCATIONS; FABRICATION PROCESS; FOUR-ORDER; MOBILITY FLUCTUATIONS; ORDERS OF MAGNITUDE; QUALITY MATERIALS; RESPONSIVITY; SCHOTTKY; SCHOTTKY BARRIERS;

CARRIER MOBILITY; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS;

DETECTORS;

EID: 79956058677 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1433910 Document Type: Article

Times cited : (58)

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