Simulation of leakage characteristics in epitaxial (Ba, Sr)TiO3 thin film after hydrogen-containing forming gas anneal

Journal of Physics D: Applied Physics

Volumn 39, Issue 15, 2006, Pages 3371-3374

  Li, Jiantong ^a   Dong, Xianlin ^a   Chen, Ying ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; LEAKAGE CURRENTS; TITANIUM OXIDES;

BARRIER HEIGHTS; GAS ANNEAL; LEAKAGE MECHANISM; SPACE CHARGE EFFECTS;

THIN FILMS;

EID: 33746442447     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/15/022     Document Type: Article

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