Investigation of the importance of interface and bulk limited transport mechanisms on the leakage current of high dielectric constant thin film capacitors

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6741-6748

  Baniecki, J D ^a   Shioga, T ^a   Kurihara, K ^a   Kamehara, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITORS; ELECTRON TUNNELING; LEAKAGE CURRENTS; PERMITTIVITY; THERMIONIC EMISSION; TRANSPORT PROPERTIES; VELOCITY MEASUREMENT;

BULK TRANSPORT MECHANISMS; CARRIER DRIFT-DIFFUSION; ELECTRON INJECTION;

THIN FILMS;

EID: 0344946199     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1620377     Document Type: Article

References (62)

1. D. E. Kotecki, J. D. Baniecki, H. Shen, R. B. Laibowitz, K. L. Saenger, L. Lian, T. M. Shaw, S. D. Athavale, C. Cabrai, Jr., P. R. Duncombe, M. Gutsche, G. Kunkel, Y. J. Park, Y. Wang, and R. Wise, IBM J. Res. Dev. 43, 367 (1999).
2. J. D. Baniecki, J. S. Cross, and M. Tsukada, Appl. Phys. Lett. 81, 3837 (2002).
3. Y. Imanaka, T. Shioga, and J. D. Baniecki, Fujitsu Sci. Tech. J. 38, 22 (2002).
4. J. D. Baniecki, T. Shioga, and K. Kurihara, Mater. Res. Soc. Symp. Proc. 748, 441 (2003).
5. R De Flaviis, N. G. Alexopoulos, and O. M. Stafsudd, IEEE Trans. Microwave Theory Tech. 45, 963 (1997).
6. S. K. Streiffer, C. Basceri, C. B. Parker, S. E. Lash, and A. I. Kingon, J. Appl. Phys. 86, 4565 (1999).
7. P. W. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn, Phys. Rev. Lett. 73, 2107 (1994).
8. J. C. Shin, J. Park, C. S. Hwang, and H. J. Kim, J. Appl. Phys. 86, 506 (1999).
9. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, C. Parks, J. Lian, H. Xu, and Q. Y. Ma, J. Appl. Phys. 89, 2873 (2001).
10. J. F. Scott, Ferroelectric Memories (Springer, New York, 2000), pp. 98-104.
11. S. Yamamichi, H. Yabuta, T. Sakuma, and Y. Miyasaka, Appl. Phys. Lett. 64, 1644 (1994).
12. K. H. Ahn, S. S. Kim, and S. Baik, J. Appl. Phys. 92, 421 (2002).
13. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, P. R. Duncombe, D. A. Neumayer, M. Copel, D. E. Kotecki, H. Shen, and Q. Y. Ma, Mater. Res. Soc. Symp. Proc. 493, 27 (1998).
14. C. S. Hwang, B. T. Lee, C. S. Kang, J. W. Kim, K. H. Lee, H. J. Cho, H. Horii, W. D. Kim, S. I. Lee, Y. B. Roh, and M. Y. Lee, J. Appl. Phys. 83, 3703 (1998).
15. G. W. Dietz and R. Waser, Thin Solid Films 299, 53 (1997).
16. S. Bhattacharyya, A. Laha, and S. B. Krupanidhi, J. Appl. Phys. 91, 4543 (2002).
17. G. W. Dietz, M. Schumacher, R. Waser, S. K. Streiffer, C. Basceri, and A. I. Kingon, J. Appl. Phys. 82, 2359 (1997).
18. S. Zafar, R. E. Jones, B. Jiang, B. White, V. Kaushik, and S. Gillespie, Appl. Phys. Lett. 73, 3533 (1998).
19. S. Schmitz and H. Schroeder, Integr. Ferroelectr. 46, 233 (2002).
20. H. Schroeder, S. Schmitz, and P. Meuffels, Appl. Phys. Lett. 82, 781 (2003).
21. E. L. Murphy and R. H. Good, Jr., Phys. Rev. 102, 1464 (1956).
22. C. R. Crowell and S. M. Sze, Solid-State Electron. 9, 1035 (1966).
23. G. M. Choi, H. L. Tuller, and D. Goldschmidt, Phys. Rev. B 34, 6972 (1986).
24. E. H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, U.K., 1978), pp. 40-41.
25. 1m from the metal/dielectric interface at contact 1. Conditions for a local maximum at contact 2 are discussed in the text.
26. 2 provided it is close enough to contact 2 so that the limits of integration in Eq. (15) span the distance over which the integrand in Eq. (15) is appreciable.
27. M. S. Lundstrom, Solid-State Electron. 27, 491 (1984).
28. A. A. Grinberg, M. S. Shur, R. J. Fischer, and H. Morkoc, IEEE Trans. Electron Devices 31, 1758 (1984).
29. R. B. Darling, Solid-State Electron. 31, 1031 (1988).
30. K. Yang, J. R. East, and G. I. Haddad, Solid-State Electron. 36, 321 (1993).
31. C. Y. Chang and S. M. Sze, Solid-State Electron. 13, 727 (1970).
32. C. M. Wu and E. S. Yang, Solid-State Electron. 22, 241 (1979).
33. D. Schroeder, J. Appl. Phys. 72, 964 (1992).
34. H. K. Heinish, Semiconductor Contacts: An Approach to Ideas and Models (Clarendon, Oxford, U.K., 1989), pp. 108-113.
35. D. Schroeder, in Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes, Zurich, edited by W. Fitchner and D. Aemmer (Hartung-Gorre, Konstanz, 1991), p. 313.
36. G. Chen, Appl. Phys. Lett. 82, 991 (2003).
37. Supriyo Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, U.K., 1995), pp. 49-112.
38. S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981), pp. 17 and 245-311.
39. H. Hjelmgren, IEEE Trans. Electron Devices 37, 1228 (1990).
40. M. A. Stettler and M. S. Lundstrom, IEEE Trans. Electron Devices 41, 592 (1994).
41. A. A. Grinberg and S. Luryi, IEEE Trans. Electron Devices 40, 859 (1993).
42. H. A. Bethe, MIT Radiat. Lab. Rep. 43-12 (1942).
43. W. Schottky, Naturwissenschaften 26, 843 (1938).
44. W. Schultz, Z. Phys. 138, 598 (1954).
45. J. G. Simmons, Phys. Rev. Lett. 15, 967 (1965).
46. R. Stratton, Phys. Rev. 125, 67 (1962).
47. C. R. Crowell, Solid-State Electron. 8, 395 (1965).
48. C. R. Crowell, Solid-State Electron. 12, 55 (1969).
49. S. J. Fonash, Solid-State Electron. 15, 783 (1972).
50. C. R. Crowell and M. Beguwala, Solid-State Electron. 14, 1149 (1971).
51. E. C. Kemble, Fundamental Principles of Quantum Mechanics (McGraw-Hill, New York, 1937), p. 109.
52. V. L. Rideout and C. R. Crowell, Solid-State Electron. 13, 993 (1970).
53. P. C. McIntyre, J.-H. Ahn, R. J. Becker, R.-V. Wang, S. R. Gilbert, L. Wills Mirkarimi, and M. T. Schulberg, J. Appl. Phys. 89, 6378 (2001).
54. 2t, the tunneling effective masses for electrons transported across the Schottky barriers at contacts 1 and 2, respectively.
55. M. Dawber and J. F. Scott, Jpn. J. Appl. Phys., Part 1 41, 6848 (2002).
56. C. S. Hwang, J. Appl. Phys. 92, 432 (2002).
57. W. Schmickler, in Structure of Electrified Interfaces, edited by J. Lipkowski and P. N. Ross (VCH, New York, 1993), pp. 201-238.
58. N. D. Lang and W. Kohn, Phys. Rev. B 7, 3541 (1973).
59. A. K. Theophilou and A. Modinos, Phys. Rev. B 6, 801 (1972).
60. C. R. Crowell, Appl. Phys. Lett. 8, 328 (1966).
61. D was calculated to be -1.2%.
62. J. Sinkkonen, Solid-State Electron. 26, 1111 (1983).