Influence of Ce doping on leakage current in Ba0.5Sr 0.5TiO3 films

Journal of Physics D: Applied Physics

Volumn 38, Issue 13, 2005, Pages 2253-2257

  Wang, S Y ^a   Cheng, B L ^a   Wang, Can ^a   Redfern, S A T ^b   Dai, S Y ^a   Jin, K J ^a   Lu, H B ^a   Zhou, Y L ^a   Chen, Z H ^a   Yang, G Z ^a  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CERIUM; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; ELECTRODES; LEAKAGE CURRENTS; PULSED LASER DEPOSITION; REDUCTION; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION CHAMBERS; SCHOTTKY EMISSIONS; SPACE-CHARGE-LIMITED CURRENTS; UNDOPED FILMS;

THIN FILMS;

EID: 21044436445     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/13/025     Document Type: Article

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