Emerging memory technologies

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5274, Issue , 2004, Pages 7-13

  Natarajan, Sreedhar ^a  

^a MoSys Incorporated   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON TUNNELING; MAGNETORESISTANCE; SILICON; STATIC RANDOM ACCESS STORAGE; THYRISTORS;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); FERRO ELECTRIC MEMORY TECHNOLOGY (FRAM); OVONIC UNIFIED MEMORY (OUM); TUNNELING OXIDE THICKNESS;

FLASH MEMORY;

EID: 2442505543     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.530385     Document Type: Conference Paper

References (14)

1. S.Natarajan, Emerging Memory Technologies, CICC 2003 Tutorial
2. Stefan Lai, "Future trends in non-volatile memory technology", IDF, Feb. 2002.
3. Axon Technology Corporation - official website at http://www.axontc.com
4. Ashok K. Sharma, Semiconductor Memories: Technology, Testing and Reliability, IEEE Press 1997.
5. Stefan Lai, "Tunnel oxide and ETOX® flash scaling limits", IEEE international non volatile memory technology conference, 1998
6. Embedded Non volatile memories, C.Gopalan.
7. A Survey of Ferroelectric memories: Ali Sheikoleslami, IEEE JSSC, 2001.
8. Emerging Memories, B.Prince, Kluwer Academic publishers
9. Linda Geppert, "The new indelible memories", IEEE Spectrum, March 2003 (49-54).
10. S.Natarajan, Future of Embedded Memories, UC Irvine, CA, Oct 2003
11. Embedded Memories, Short Course, Silicon Nanoelectronics workshop 2003
12. T-RAM website, www.t-ram.com
13. F.Nemati & J.D.Plummer, Highperformance fully and partially depleted poly-Si surrounding gate transistors (Stanford), VLSI Tech. Sym, 1991.
14. Ultra low power embedded ferroelectric memory for SoC, S.Natarajan, A. Alvandpour, SPIE Symposium 2003.