High-performance emerging solid-state memory technologies

MRS Bulletin

Volumn 29, Issue 11, 2004, Pages 805-813

  Goronkin, Herb ^a   Yang, Yang ^b  

^a Technology Acceleration Associates

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Solid state memory; Storage technology

Indexed keywords

CMOS INTEGRATED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ENERGY DISSIPATION; OXIDATION;

MEMORY CAPACITORS; SOLID-STATE MEMORY; STORAGE TECHNOLOGY;

SOLID STATE DEVICES;

EID: 10044289655     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2004.232     Document Type: Review

References (7)

1. C.P. Collier, G. Martersteig, E.W. Wong, Y. Luo, K. Beverly, J. Sampaio, F.M. Raymo, J.F. Stoddart, and J. R. Heath, Science 289 (2000) p. 1172.
2. X. Duan, Y. Huang, and C.M. Lieber, Nano Lett. 2 (2002) p. 487.
3. C.P. Collier, E.W. Wong, M. Belohradský, F.M. Raymo, J.F. Stoddart, P.J. Kuekes, R.S. Williams, and J.R. Heath, Science 285 (1999) p. 391.
4. S. Tehrani, J.M. Slaughter, M. DeHerrera, B.N. Engel, N.D. Rizzo, J. Salter, M. Durlam, R.W. Dave, J. Janesky, B. Butcher, K. Smith, and G. Grynkewich, in Proc. IEEE 91 (2003) p. 703.
5. S.-M. Yoon and H. Ishiwara, in IEEE Trans. on Electron Devices 48 (2001) p. 2002.
6. L.P. Ma, S. Pyo, J. Ouyang, Q. Xu, and Y. Yang, Appl. Phys. Lett. 82 (2003) p. 1419.
7. K.M. Roth, D.T. Gryko, C. Clausen, J. Li, J.S. Lindsey, D.F. Bocian, and W.G. Kuhr, J. Phys. Chem. B 106 (2002) p. 8639.