Selective effect of ion/surface interaction in low frequency PACVD of SIC:H films: Part B. Microstructural study

Surface and Coatings Technology

Volumn 201, Issue 1-2, 2006, Pages 174-181

  Soum Glaude, A ^a   Thomas, L ^a   Tomasella, E ^a   Badie, J M ^b   Berjoan, R ^b  

^a CNRS   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Ion bombardment; Microstructure characterization; PACVD; Silicon carbide; Tetramethylsilane

Indexed keywords

AMORPHOUS FILMS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; ION BOMBARDMENT; MICROSTRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

HARD AMORPHOUS FILMS; MICROSTRUCTURE CHARACTERIZATION; SILICON CARBIDE FILMS; TETRAMETHYLSILANE;

SILICON CARBIDE;

AMORPHOUS FILMS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; ION BOMBARDMENT; MICROSTRUCTURE; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 33746192301     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2005.11.076     Document Type: Article

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