Study of precipitate in Si-rich SiO 2 films

Applied Surface Science

Volumn 194, Issue 1-4, 2002, Pages 106-111

  Brusa, R S ^a   Deng, W ^a   Karwasz, G P ^a   Zecca, A ^a   Mariotto, G ^a   Folegati, P ^b   Ferragut, R ^b   Dupasquier, A ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Positron annihilation; Si rich silicon oxide; Slow positron beam; Vibrational spectroscopy

Indexed keywords

CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY; PRECIPITATION (CHEMICAL); RAMAN SPECTROSCOPY; SILICA;

POSITRON ANNIHILATIONS; VIBRATIONAL SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0037150625     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00097-1     Document Type: Conference Paper

References (15)