Electrical measurements and optical emission spectroscopy of silicon-carbon alloys grown by PACVD: Correlation with film microstructure

Advanced Materials

Volumn 15, Issue 12, 2003, Pages 130-138

  Thomas, Laurent ^a   Tomasella, Eric ^b   Badie, J Marie ^a   Berjoan, René ^a   Ducarroir, Michel ^a  

^a Centre National de la Recherche Scientifique   (France)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Amorphous silicon carbide; Ion assisted PACVD; Microstructural characterizations; Plasma diagnostics; Tetramethylsilane

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPPLER EFFECT; FILM GROWTH; MICROSTRUCTURE; PLASMA DIAGNOSTICS;

PLASMA CHEMISTRY;

SILICON ALLOYS;

EID: 0038042369     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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