Crystallization of silicon carbide thin films by pulsed laser irradiation

Applied Surface Science

Volumn 106, Issue , 1996, Pages 193-197

  De Cesare, G ^a   La Monica, S ^a   Maiello, G ^a   Masini, G ^a   Proverbio, E ^a   Ferrari, A ^a   Chitica, N ^b   Dinescu, M ^b   Alexandrescu, R ^b   Morjan, I ^b   Rotiu, E ^c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b INSTITUTE OF ATOMIC PHYSICS   (Romania)

^c Institutul National de Sticla Bucuresti   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EXCIMER LASERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; PULSED LASER APPLICATIONS; SILICON CARBIDE; SILICON WAFERS; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0030565825     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00399-6     Document Type: Article

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