Selective effect of ion/surface interaction in low frequency PACVD of SiC:H films: Part A. Gas phase considerations

Surface and Coatings Technology

Volumn 200, Issue 1-4 SPEC. ISS., 2005, Pages 855-858

  Soum Glaude, A ^a   Thomas, L ^a   Tomasella, E ^a   Badie, J M ^b   Berjoan, R ^b  

^a CNRS   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Ion bombardment; PACVD; Plasma diagnostics; Silicon carbide; SRIM simulation; Tetramethylsilane

Indexed keywords

ARGON; COMPUTER SIMULATION; EMISSION SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BOMBARDMENT; MAGNETRON SPUTTERING; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SRIM SIMULATION; TETRAMETHYLSILANE;

SILICON CARBIDE;

COATING;

EID: 24644512208     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2005.02.151     Document Type: Article

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